SI4818DY Datasheet, PDF (3/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 4 V
24
24
3V
18
18
CHANNEL−1
Transfer Characteristics
12
6
0
0
0.05
1V
2V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
12
T_C = 125_C
6
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
1000
Capacitance
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
800
C_iss
600
400
C_oss
200
C_rss
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 6.3 A
8
6
4
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Document Number: 71122
S-31062—Rev. B, 26-May-03
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 6.3 A
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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