SI4818DY Datasheet, PDF (1/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4818DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
Channel-1
30
Channel-2
0.022 @ V_GS = 10 V
0.030 @ V_GS = 4.5 V
0.0155 @ V_GS = 10 V
0.0205 @ V_GS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.50 V @ 1.0 A
I_D (A)
6.3
5.4
9.5
8.2
I_F (A)
2.0
D₁
D₂ D₂ D₂
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D2
6 ^D2
5 ^D2
Top View
Ordering Information: Si4818DY
Si4818DY-T1 (with Tape and Reel)
Schottky Diode
G₁
G₂
S₁
N-Channel 1
MOSFET
S₂
A
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol ^{10 secs Steady State 10 secs Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
20
6.3
5.3
9.5
7.0
5.4
4.2
7.6
5.6
30
40
1.3
0.9
2.2
1.15
1.4
1.0
2.4
1.25
0.9
0.64
1.5
0.80
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJC
Document Number: 71122
S-31062—Rev. B, 26-May-03
Channel-1
Typ Max
72
90
100
125
51
63
Channel-2
Typ Max
43
53
82
100
25
30
Schottky
Typ Max
48
60
80
100
28
35
Unit
_C/W
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