SI4804CDY-T1-GE3 Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
V_GS = 10 thru 4 V
24
4
Si4804CDY
Vishay Siliconix
T_C = - 55 °C
18
12
V_GS = 3 V
6
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.026
0.024
0.022
V_GS = 4.5 V
3
T_C = 125 °C
2
1
T_C = 25 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1100
C_iss
880
660
0.020
0.018
V_GS = 10 V
0.016
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 7.5 A
8
6
V_DS = 10 V
V_DS = 15 V
4
V_DS = 20 V
2
0
0.0
3.2
6.4
9.6
12.8
16.0
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68924
S-82485-Rev. A, 13-Oct-08
440
C_oss
220
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 7.5 A
1.6
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3