SI4804CDY-T1-GE3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

New Product
Dual N-Channel 30-V (D-S) MOSFET
Si4804CDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.022 at V_GS = 10 V
30
0.027 at V_GS = 4.5 V
I_D (A)^a
8
7.9
Q_g (Typ.)
7
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• DC/DC
• Notebook System Power
RoHS
COMPLIANT
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 D₁
7 ^D1
6 D₂
5 ^D2
Top View
Ordering Information: Si4804CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
G₁
S₁
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
I_DM
Source-Drain Current Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Pulsed Source-Drain Current
I_SM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
30
± 20
8.0
7.1
7.1^{b, c}
5.5^{b, c}
30
2.4
1.8^{b, c}
30
10
5
3.1
2
2^{b, c}
1.28^{b, c}
- 55 to 150
D₂
G₂
S₂
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 68924
S-82485-Rev. A, 13-Oct-08
Typical
49
32
Maximum
62.5
40
Unit
°C/W
www.vishay.com
1