SI4752DY Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET with Schottky Diode

New Product
Si4752DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
1.2
V_GS = 10 V thru 4 V
64
48
V_GS = 3 V
32
16
0
0.0
0.009
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
0.8
0.6
0.4
T_C = 25 °C
0.2
T_C = 125 °C
0.0
T_C = - 55 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2200
0.008
0.007
V_GS = 4.5 V
C_iss
1760
1320
0.006
0.005
V_GS = 10 V
0.004
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 15 V
6
V_DS = 10 V
4
V_DS = 20 V
2
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
880
C_oss
440
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.6
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 66819
S10-2008-Rev. A, 06-Sep-10
www.vishay.com
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