SI4752DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET with Schottky Diode

New Product
Si4752DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) ()
0.0055 at V_GS = 10 V
0.0076 at V_GS = 4.5 V
I_D (A)^a
25
21
Q_g (Typ.)
13.8 nC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET^Monolithic TrenchFET^Power
MOSFET and Schottky Diode
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power
• VRM, POL, Server
D
• Synchronous Rectifier Switch
Schottky Diode
G
Top View
Ordering Information: Si4752DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
P_D
T_J, T_stg
S
N-Channel MOSFET
Limit
30
± 20
25
20
17.4^{b, c}
13.8^{b, c}
80
5.6
2.7^{b, c}
20
20
6.25
4.0
3.0^{b, c}
1.9^{b, c}
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typ.
33
16
Max.
42
20
Unit
°C/W
Document Number: 66819
S10-2008-Rev. A, 06-Sep-10
www.vishay.com
1