SI4682DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
1.2
1.0
40
V_GS = 10 V thru 4 V
0.8
30
0.6
20
0.4
10
3V
0.2
0
0.0
0.3
0.6
0.9
1.2
1.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.016
0.0
1.0
2000
0.014
0.012
V_GS = 4.5 V
1600
1200
Si4682DY
Vishay Siliconix
T_C = 125 °C
25 °C
- 55 °C
1.4
1.8
2.2
2.6
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.010
0.008
V_GS = 10 V
0.006
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 11 A
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
2
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73317
S11-0209-Rev. D, 14-Feb-11
800
C_oss
400
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 12 A
1.6
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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