SI4682DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET
Si4682DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω)
0.0094 at V_GS = 10 V
0.0135 at V_GS = 4.5 V
I_D (A)^a
16
13
Q_g (Typ.)
11 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Q_gd for Low Switching Losses
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
D
G
Top View
Ordering Information: Si4682DY-T1-E3 (Lead (Pb)-free)
Si4682DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
30
± 20
16
12.9
12^{b, c}
9.5^{b, c}
50
4.0
2.3^{b, c}
20
20
4.45
2.85
2.50^{b, c}
1.6^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJF
Typical
36
22
Maximum
50
28
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73317
S11-0209-Rev. D, 14-Feb-11
www.vishay.com
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