SI4660DY Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
2.0
Si4660DY
Vishay Siliconix
56
V_GS = 10 V thru 4 V
42
V_GS = 3 V
28
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0070
0.0065
0.0060
0.0055
V_GS = 4.5 V
0.0050
0.0045
V_GS = 10 V
0.0040
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
6
V_DS = 10 V
V_DS = 15 V
4
V_DS = 20 V
2
0
0.0
6.2
12.4
18.6
24.8
31.0
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 69533
S09-0138-Rev. B, 02-Feb-09
1.6
1.2
0.8
T_J = 25 °C
0.4
T_J = 125 °C
T_J = -- 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
C_iss
2400
1800
1200
600
C_oss
0 ^Crss
0
5
10
15
20
25
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 15 A
1.6
1.4
1.2
1.0 _{VGS = 10 V}
0.8
V_GS = 4.5 V
0.6
- 50 - 25 0 25 50
75 100 125 150
T_J - Junction Temperature ( °C)
On-Resistance vs. Junction Temperature
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