SI4660DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

N-Channel 25-V (D-S) MOSFET
Si4660DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0058 at V_GS = 10 V
25
0.007at V_GS = 4.5 V
I_D (A)^a
23.1
21
Q_g (Typ.)
17 nC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
Top View
Ordering Information: Si4660DY-T1-E3 (Lead (Pb)-free)
Si4660DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• DC/DC Conversion
- High Side
- Low Side
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
25
V
V_GS
± 16
T_C = 25 °C
23.1
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
18.5
17.2^{b, c}
Pulsed Drain Current
T_A = 70 °C
13.8^{b, c}
A
I_DM
70
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
5
2.8^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
30
Avalanche Energy
E_AS
45
mJ
T_C = 25 °C
5.6
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.6
3.1^{b, c}
W
T_A = 70 °C
2.0^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 69533
S09-0138-Rev. B, 02-Feb-09
Typical
34
18
Maximum
40
22
Unit
°C/W
www.vishay.com
1