SI4646DY Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
5
V_GS = 10 V thru 4 V
40
4
Si4646DY
Vishay Siliconix
30
20
V_GS = 3 V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.017
0.015
3
2
1
0
0
2200
1760
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.013
0.011
0.009
V_GS = 4.5 V
V_GS = 10 V
0.007
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 15 V
V_DS = 10 V
6
V_DS = 20 V
4
2
0
0.0
6.2
12.4
18.6
24.8
31.0
Q_g - Total Gate Charge (nC)
Gate Charge
1320
880
C_oss
440
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.6
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68762
S09-0868-Rev. B, 18-May-09
www.vishay.com
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