SI4632DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 25 V (D-S) MOSFET

Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
70
1.2
V_GS = 10 V thru 4 V
56
0.9
42
3V
28
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0034
0.0030
0.0026
0.0022
V_GS = 4.5 V
V_GS = 10 V
0.0018
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 10 V
0.6
25 °C
0.3
T_C = 125 °C
- 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
8500
C_iss
6800
5100
3400
1700
C_oss
0 ^Crss
0
5
10
15
20
25
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 20 A
1.4
V_GS = 10 V
6
V_DS = 15 V
1.2
4
V_GS = 20 V
1.0
V_GS = 4.5 V
2
0.8
0
0
22
44
66
88
110
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
www.vishay.com
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