SI4632DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 25 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET
Si4632DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
25
0.0027 at V_GS = 10 V
0.0033 at V_GS = 4.5 V
I_D (A)^a
36
29
Q_g (Typ.)
49 nC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Q_gd
• 100 % R_g Tested
• UIS and Capacitance Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Buck - Low Side
- Notebook
- Server
- Workstation
D
• Synchronous Rectifier - POL
G
Top View
Ordering Information: Si4632DY-T1-E3 (Lead (Pb)-free)
Si4632DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
25
± 16
40
32
27^{b, c}
21^{b, c}
70
7.0
3.0^{b, c}
30
45
7.8
5.0
3.5^{b, c}
2.2^{b, c}
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
mJ
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
t≤5s
Steady
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
Symbol
R_thJA
R_thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
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