SI4486EY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si4486EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04
3500
Capacitance
0.03
0.02
V_GS = 6.0 V
V_GS = 10 V
3000
C_iss
2500
2000
1500
0.01
0.00
0
8
16
24
32
40
I_D - Drain Current (A)
Gate Charge
10
V_DS = 50 V
I_D = 7.9 A
8
6
1000
C_rss
500
C_oss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.6
V_GS = 10 V
2.3
I_D = 7.9 A
2.0
1.7
4
1.4
1.1
2
0.8
0
0
6
12
18
24
30
36
Q_g - Total Gate Charge (nC)
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.08
T_J = 175_C
10
T_J = 25_C
0.06
0.04
0.02
I_D = 7.9 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71234
S-03951—Rev. B, 26-May-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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2-3