SI4486EY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si4486EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
100
r_DS(on) (W)
0.025 @ V_GS = 10 V
0.028 @ V_GS = 6.0 V
I_D (A)
7.9
7.5
D
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4486EY
Si4486EY-T1 (with Tape and Reel)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
L = 0.1 mH
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
I_S
P_D
T_J, T_stg
100
"20
7.9
5.4
6.1
4.2
40
30
45
3.1
1.5
3.8
1.8
2.3
1.1
- 55 to 175
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71234
S-03951—Rev. B, 26-May-03
Symbol
R_thJA
R_thJF
Typical
33
70
17
Maximum
40
85
21
Unit
_C/W
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