SI4485DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

SPICE Device Model Si4485DY
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA T_J = 25 °C, unless otherwise noted
25
3.0
20
V_GS = 10 V, 7 V, 6 V, 5 V
15
V_GS = 4 V
10
5
V_GS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
2.4
1.8
1.2
0.6
0.0
0
T_J = 125 °C
T_J = - 55 °C
T_J = 25 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
0.10
0.08
0.06
0.04
0.02
0.00
0
V_GS = 4.5 V
V_GS = 10 V
5
10
15
20
25
I_D - Drain Current (A)
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
10
I_D = 5.9 A
8
6
V_DS = 15 V
V_DS = 24 V
4
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Note
Dots and squares represent measured data.
Document Number: 65210
S09-1557-Rev. A, 24-Aug-09
100
10
T_J = 150 °C
T_J = 25 °C
1
0.1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
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3