SI4485DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

SPICE Device Model Si4485DY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to + 125 °C temperature ranges under the pulsed 0 V to
10 V gate drive. The saturated output impedance is best fit at
the gate bias near the threshold voltage. A novel
gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence
difficulties of the switched C_gd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
D
C_GD
M2
R1
Gy
Gx
3
DBD
G
+–
R_G
ETCV
C_GS
M1
S
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 65210
S09-1557-Rev. A, 24-Aug-09
www.vishay.com
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