SI4483ADY-T1-GE3 Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
10
V_GS = 10 V thru 5 V
56
8
Si4483ADY
Vishay Siliconix
42
V_GS = 4 V
28
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.030
6
4
2
0
0
6000
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.024
0.018
0.012
0.006
V_GS = 4.5 V
V_GS = 10 V
0
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
6
V_DS = 10 V
V_DS = 15 V
4
V_DS = 20 V
2
4800
C_iss
3600
2400
1200
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68982
S10-2543-Rev. B, 08-Nov-10
www.vishay.com
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