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| SI4483ADY-T1-GE3 Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET | |||
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P-Channel 30 V (D-S) MOSFET
Si4483ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (ï)
0.0088 at VGS = - 10 V
0.0153 at VGS = - 4.5 V
ID (A)d
- 19.2
- 14.6
Qg (Typ.)
44.8 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠100 % UIS Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
S
⢠Adaptor Switch
G
Top View
Ordering Information: Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
ID
TA = 25 °C
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
IS
TA = 25 °C
IAS
L = 0.1 mH
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
PD
TA = 25 °C
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
D
P-Channel MOSFET
Limit
- 30
± 25
- 19.2
- 15.4
- 13.5a, b
- 10.9a, b
- 70
- 4.9
- 2.4a, b
20
20
5.9
3.8
2.9a, b
1.9a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on TC = 25 °C.
t ï£ï 10 s
Steady State
Document Number: 68982
S10-2543-Rev. B, 08-Nov-10
Symbol
RthJA
RthJF
Typical
33
16
Maximum
42
21
Unit
°C/W
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