SI4482DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si4482DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 10 thru 6 V
32
30
5V
24
20
16
10
1, 2, 3 V
4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10
8
0
0
2500
0.08
2000
Transfer Characteristics
T_C = 125_C
25_C
- 55_C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Capacitance
C_iss
0.06
0.04
V_GS = 6 V
V_GS = 10 V
1500
1000
0.02
0.00
0
10
10
20
30
40
I_D - Drain Current (A)
Gate Charge
V_DS = 50 V
8
I_D = 4.6 A
6
500
C_oss
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
2.0
I_D = 4.6 A
1.5
4
1.0
2
0.5
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Document Number: 70749
S-03951—Rev. B, 26-May-03
0.0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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