SI4482DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si4482DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 100 V, V_GS = 0 V
V_DS = 100 V, V_GS = 0 V, T_J = 55_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 4.6 A
V_GS = 6 V, I_D = 4.0 A
V_DS = 15 V, I_D = 4.6 A
I_S = 2.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
V_DS = 50 V, V_GS = 10 V, I_D = 4.6 A
V_DD = 50 V, R_L = 50 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.1 A, di/dt = 100 A/ms
Min Typ^a Max Unit
2
V
"100
nA
1
mA
20
20
A
0.045
0.060
W
0.050
0.080
20
S
1.2
V
30
50
7.5
nC
7
1
4.4
W
13
25
12
25
60
90
ns
25
40
50
80
www.vishay.com
2-2
Document Number: 70749
S-03951—Rev. B, 26-May-03