SI4480EY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 80-V (D-S) MOSFET

Si4480EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
2500
Capacitance
0.04
0.03
0.02
0.01
0.00
0
V_GS = 6 V
V_GS = 10 V
10
20
30
40
I_D - Drain Current (A)
2000
C_iss
1500
1000
C_oss
500
C_rss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 40 V
I_D = 6.0 A
8
6
4
2
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
T_J = 175_C
10
On-Resistance vs. Junction Temperature
2.4
2.2
V_GS = 10 V
I_D = 6 A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
I_D = 6.0 A
0.04
0.03
T_J = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
0.00
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
Document Number: 71060
S-03951—Rev. B, 26-May-03
www.vishay.com
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