SI4480EY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 80-V (D-S) MOSFET

N-Channel 80-V (D-S) MOSFET
Si4480EY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.035 @ V_GS = 10 V
80
0.040 @ V_GS = 6.0 V
I_D (A)
6.2
5.8
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4480EY
Si4480EY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
80
"20
6.2
5.2
40
2.5
3
2.1
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. t v 10 sec.
Document Number: 71060
S-03951—Rev. B, 26-May-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJL
Typical
40
85
20
Maximum
50
100
24
Unit
_C/W
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2-1