SI4473BDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 14-V (D-S) MOSFET

New Product
Si4473BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
6400
Capacitance
0.04
5600
C_iss
4800
0.03
0.02
V_GS = 2.5 V
0.01
V_GS = 4.5 V
4000
3200
2400
1600
C_rss
800
C_oss
0.00
0
10
20
30
40
50
0
0
2
4
6
8
10 12 14
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 13 A
4
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
1.3
V_GS = 4.5 V
I_D = 13 A
1.2
3
1.1
1.0
2
0.9
0.8
1
0.7
0
0
10
20
30
40
50
60
Q_g − Total Gate Charge (nC)
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
0.060
0.050
T_J = 150_C
10
T_J = 25_C
0.040
0.030
0.020
0.010
I_D = 2.5 A
I_D = 13 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
0.000
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Document Number: 72691
S-32676—Rev. A, 29-Dec-03
www.vishay.com
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