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SI4473BDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 14-V (D-S) MOSFET | |||
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New Product
P-Channel 14-V (D-S) MOSFET
Si4473BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.011 @ VGS = â4.5 V
â14
0.018 @ VGS = â2.5 V
ID (A)
â13
â10
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATION
D Battery Switch for Portable Devices
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4473BDYâE3 (lLead Free)
Si4473BDY-T1âE3 (Lead Free with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
â14
"12
â13
â9.8
â9.9
â7.8
â50
â2.3
â1.34
2.5
1.5
1.6
0.94
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
Document Number: 72691
S-32676âRev. A, 29-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
15
Maximum
50
85
18
Unit
_C/W
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