SI4466DY-T1-E3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
4000
Si4466DY
Vishay Siliconix
0.016
3200
0.012
0.008
0.004
V_GS = 2.5 V
V_GS = 4.5 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
V_DS = 10 V
I_D = 13.5 A
5
4
3
2
1
0
0
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Gate Charge
50
2400
C_iss
1600
C_oss
800
0
0
C_rss
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 13.5 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
T_J = 150 °C
10
0.04
I_D = 13.5 A
0.03
T_J = 25 °C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71820
S09-0767-Rev. F, 04-May-09
www.vishay.com
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