SI4466DY-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

N-Channel 2.5-V (G-S) MOSFET
Si4466DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
20
0.009 at V_GS = 4.5 V
0.013 at V_GS = 2.5 V
I_D (A)
13.5
11
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4466DY-T1-E3 (Lead (Pb)-free)
Si4466DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
13.5
9.5
10.5
7.5
A
I_DM
50
Continuous Source Current (Diode Conduction)^a
I_S
2.7
1.36
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.0
1.5
1.9
0.95
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
33
70
16
Maximum
42
84
21
Unit
°C/W
Document Number: 71820
S09-0767-Rev. F, 04-May-09
www.vishay.com
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