SI4462DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.8
400
Si4462DY
Vishay Siliconix
Capacitance
0.6
V_GS = 6 V
0.4
V_GS = 10 V
0.2
0.0
0
1
2
3
4
5
I_D - Drain Current (A)
Gate Charge
10
V_DS = 100 V
I_D = 1.5 A
8
6
4
2
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
5
T_J = 150_C
1
T_J = 25_C
300
C_iss
200
100
C_rss
C_oss
0
0
20
40
60
80
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
I_D = 1.5 A
2.1
1.7
1.3
0.9
0.5
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.8
0.6
I_D = 1.5 A
0.4
0.2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72093
S-22098—Rev. A, 02-Dec-02
0.0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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