SI4462DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

Si4462DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 160 V, V_GS = 0 V
V_DS = 160 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 1.5 A
V_GS = 6.0 V, I_D = 1.45 A
V_DS = 15 V, I_D = 1.5A
I_S = 2.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_G
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 100 V, V_GS = 10 V, I_D = 1.5 A
V_DD = 100 V, R_L = 100 W
I_D ^ 1.0 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0
4
V
"100
nA
1
mA
5
5
A
0.39
0.480
W
0.420
0.510
5
S
0.8
1.2
V
6
9
0.9
nC
1.9
3.7
W
10
15
12
20
10
15
ns
15
25
55
90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
5
4
3
2
1
0
0
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2
Output Characteristics
V_GS = 10 thru 5 V
4V
3V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Transfer Characteristics
5
4
3
2
T_C = 125_C
1
25_C
-55 _C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72093
S-22098—Rev. A, 02-Dec-02