SI4459ADY_13 Datasheet, PDF (3/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
4.0
V_GS = 10 thru 4 V
56
3.2
Si4459ADY
Vishay Siliconix
42
28
V_GS = 3 V
14
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.008
2.4
1.6
0.8
0.0
0.0
9000
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.8
1.6
2.4
3.2
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.007
0.006
V_GS = 4.5 V
7200
C_iss
5400
0.005
0.004
V_GS = 10 V
0.003
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 20 A
8
V_DS = 10 V
V_DS = 15 V
6
V_DS = 20 V
4
3600
1800
C_rss
C_oss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 15 A
1.4
1.2
1.0
V_GS = 10 V
V_GS = 4.5 V
2
0.8
0
0
30
60
90
120
150
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69979
www.vishay.com
S11-1813-Rev. B, 12-Sep-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000