SI4459ADY_13 Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si4459ADY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
- 30
0.005 at V_GS = - 10 V
0.00775 at V_GS = - 4.5 V
I_D (A)^d
- 29
- 23
Q_g (Typ.)
61 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Adaptor Switch
• Notebook
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4459ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
T_C = 25 °C
- 29
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
- 23.5
- 19.7^{a, b}
- 15.6^{a, b}
A
- 70
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
- 6.5
- 2.9^{a, b}
- 30
45
mJ
T_C = 25 °C
7.8
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
5
3.5^{a, b}
W
T_A = 70 °C
2.2^{a, b}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 80 °C/W.
d. Based on T_C = 25 °C.
t 10 s
Steady State
Symbol
R_thJA
R_thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Document Number: 69979
www.vishay.com
S11-1813-Rev. B, 12-Sep-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000