SI4425DDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

SPICE Device Model Si4425DDY
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA T_J = 25 °C, unless otherwise noted
50
2.0
40
V_GS = 10 V, 7 V, 6 V, 5 V, 4 V
30
20
V_GS = 3 V
10
1.5
T_J = - 55 °C
1.0
T_J = 125 °C
0.5
T_J = 25 °C
0
0.0
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
0.0
0
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
0.020
4000
0.015
0.010
0.005
V_GS = 4.5 V
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
3000
C_iss
2000
1000
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
10
I_D = 13 A
8
6
4
V_DS = 15 V
V_DS = 24 V
2
0
0
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Note
Dots and squares represent measured data.
Document Number: 64910
S09-0631-Rev. A, 20-Apr-09
100
10
1
T_J = 150 °C
T_J = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V_SD - Source-to-Drain Voltage (V)
www.vishay.com
3