SI4425DDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

SPICE Device Model Si4425DDY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
SIMULATED MEASURED
DATA
DATA
Static
Gate-Source Threshold Voltage
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
R_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 µA
V_GS = - 10 V, I_D = - 13 A
V_GS = - 4.5 V, I_D = - 10 A
V_DS = - 15 V, I_D = - 13 A
I_S = - 10 A
2
0.0080
0.0136
32
- 0.79
-
0.0081
0.0137
40
- 0.80
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
V_DS = - 15 V, V_GS = 0 V, f = 1 MHz
V_DS = - 15 V, V_GS = - 10 V, I_D = - 13 A
2610
457
393
52
27
2610
460
395
53
27
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = - 15 V, V_GS = - 4.5 V, I_D = - 13 A
8
8
Q_gd
13
13
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
UNIT
V
Ω
S
V
pF
nC
www.vishay.com
2
Document Number: 64910
S09-0631-Rev. A, 20-Apr-09