SI4412ADY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4412ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
1200
Capacitance
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 2 A
8
6
4
2
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 8 A
1.4
1.2
1.0
0.8
0
0
4
8
12
16
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
0.08
0.06
I_D = 3.9 A
T_J = 25_C
0.04
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71105
S-03951—Rev. B, 26-May-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
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