SI4412ADY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si4412ADY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.024 @ V_GS = 10 V
0.035 @ V_GS = 4.5 V
I_D (A)
8
6.6
DD DD
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4412ADY
Si4412ADY-T1 (with Tape and Reel)
G
N-Channel MOSFET
S
SS
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
8
5.8
6.4
4.6
30
2.3
1.2
2.5
1.3
1.6
0.8
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71105
S-03951—Rev. B, 26-May-03
Symbol
R_thJA
R_thJF
Typical
45
80
16
Maximum
50
95
20
Unit
_C/W
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