SI4411DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFE

New Product
Si4411DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
On-Resistance vs. Drain Current
5500
Capacitance
0.016
0.012
0.008
V_GS = 4.5 V
V_GS = 10 V
0.004
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
6
V_DS = 15 V
5
I_D = 13 A
4
3
2
1
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
4400
C_iss
3300
2200
1100
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 13 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.030
0.024
0.018
I_D = 13 A
1
0.012
T_J = 25_C
0.006
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72149
S-03539—Rev. B, 24-Mar-03
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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