SI4411DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFE

Si4411DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = - 24 V, V_GS = 0 V
V_DS = - 24 V, V_GS = 0 V, T_J = 70_C
V_DS = - 5 V, V_GS = - 10 V
V_GS = - 10 V, I_D = - 13 A
V_GS = - 4.5 V, I_D = - 10 A
V_DS = - 15 V, I_D = - 13 A
I_S = - 2.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
R_g
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 15 V, V_GS = - 5 V, I_D = - 13 A
V_DD = - 15 V, R_L = 15 W
I_D ^ - 1 A, V_GEN = - 10 V, R_G = 6 W
I_F = - 2.1 A, di/dt = 100 A/ms
Min
Typ
Max Unit
- 1.0
3.0
V
"100
nA
-1
mA
- 10
- 30
A
0.008
0.010
W
0.0125 0.0155
40
S
- 0.74
- 1.1
V
43
65
8.5
nC
18.5
18
30
15
25
ns
140
250
75
120
3.4
W
60
100
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V_GS = 10 thru 4 V
40
30
20
3V
10
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
50
40
30
20
T_C = 125_C
10
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Document Number: 72149
S-03539—Rev. B, 24-Mar-03