SI2307DS-T1 Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si2307DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
12
12
V_GS = 10 thru 5 V
10
10
4V
8
8
6
6
Transfer Characteristics
T_C = –55_C
25_C
125_C
4
4
3V
2
2
0
0
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
0.4
0.2
V_GS = 4.5 V
V_GS = 10 V
0
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 3 A
8
Capacitance
800
700
C_iss
600
500
400
300
200
100
0
0
C_rss
6
C_oss
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 3 A
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
0.6
–50
0
50
100
150
T_J – Junction Temperature (_C)
Document Number: 70843
S-60570—Rev. A, 16-Nov-98
www.vishay.com S FaxBack 408-970-5600
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