SI2307DS-T1 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si2307DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
–30
r_DS(on) (W)
0.080 @ V_GS = –10 V
0.140 @ V_GS = –4.5 V
I_D (A)
–3
–2
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2307DS (A7)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLSS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–30
"20
–3
–2.5
–12
–1.25
1.25
0.8
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface mounted on FR4 board.
b. t v 5 sec.
Document Number: 70843
S-60570—Rev. A, 16-Nov-98
t v 5 sec
Steady State
Symbol
R_thJA
Typical
130
Maximum
100
Unit
_C/W
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