SI1406DH Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
Si1406DH
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
800
Capacitance
0.16
0.12
0.08
V_GS = 1.8 V
V_GS = 2.5 V
0.04
V_GS = 4.5 V
0.00
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 3.9 A
4
3
2
1
0
0
1
2
3
4
5
6
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
1
T_J = 150_C
T_J = 25_C
600
C_iss
400
200
C_oss
0
C_rss
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 4.5 V
1.6
I_D = 3.9 A
1.4
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
I_D = 2 A
0.12
I_D = 3.9 A
0.08
0.04
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 70684
S-04475—Rev. A, 13-Aug-01
0.00
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
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