SI1406DH Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si1406DH
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = 16 V, V_GS = 0 V
V_DS = 16 V, V_GS = 0 V, T_J = 85_C
V_DS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 3.9 A
V_GS = 2.5 V, I_D = 3.6 A
V_GS = 1.8 V, I_D = 2 A
V_DS = 10 V, I_D = 3.9 A
I_S = 1.4 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 3.9 A
V_DD = 10 V, R_L = 20 W
I_D ^ 0.5 A, V_GEN = 4.5 V, R_G = 6 W
I_F = 1.4 A. di/dt = 100/ms
Min Typ Max Unit
0.45
V
"100
nA
1
mA
5
8
A
0.053
0.065
0.062
0.075
W
0.079
0.096
11
S
0.75
1.1
V
4.9
7.5
1.0
nC
0.95
27
41
47
71
54
81
ns
29
44
35
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V_GS = 5 thru 2 V
8
Transfer Characteristics
10
8
6
1.5 V
4
2
1V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS – Drain-to-Source Voltage (V)
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2
6
4
T_C = 125_C
2
25_C
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS – Gate-to-Source Voltage (V)
Document Number: 70684
S-04475—Rev. A, 13-Aug-01