SA2M-E35AT Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount Glass Passivated Rectifier

SA2B-E3, SA2D-E3, SA2G-E3, SA2J-E3, SA2K-E3, SA2M-E3
www.vishay.com
Vishay General Semiconductor
1000
100
10
1
0.1
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
100
Junction to Ambient
10
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics


100
T_J = 25 °C
f = 1.0 MHz


V_sig = 50 mV_p-p




10






1
0.1
1
10
100

Reverse Voltage (V)

Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
1000
Fig. 7 - Typical Transient Thermal Impedance
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 14-Aug-13
3
Document Number: 88969
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000