SA2M-E35AT Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount Glass Passivated Rectifier

SA2B-E3, SA2D-E3, SA2G-E3, SA2J-E3, SA2K-E3, SA2M-E3
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
DO-214AC (SMA)
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
2.0 A
100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I_FSM
55 A
I_R
V_F at I_F = 2.0 A
3.0 μA
0.854 V
T_J max.
Package
150 °C
DO-214AC (SMA)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL SA2B
Device marking code
2B
Max. repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
V_RRM
I_F(AV)
I_FSM
100
Operating junction and storage temperature range T_J, T_STG
SA2D
2D
200
SA2G SA2J
2G
2J
400
600
2.0
55
- 55 to + 150
SA2K
2K
800
SA2M
2M
1000
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
Typical reverse recovery time
I_F = 1.0 A
I_F = 2.0 A
T_J = 25 °C
I_F = 1.0 A
I_F = 2.0 A
T_J = 125 °C
Rated V_R
T_J = 25 °C
T_J = 125 °C
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
V_F ⁽¹⁾
I_R ⁽²⁾
t_rr
0.911
0.954
0.805
0.854
0.19
28
1.5
Typical junction capacitance
4.0 V, 1 MHz
C_J
11
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
1.1
-
0.95
3
90
-
-
UNIT
V
μA
μs
pF
Revision: 14-Aug-13
1
Document Number: 88969
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000