RGF1J-E3 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount Glass Passivated Junction Fast Switching Rectifier

RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M
www.vishay.com
Vishay General Semiconductor
10
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
1
10
T_J = 25 °C
Pulse Width = 300 µs
0.1
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
T_J = 125 °C
1
T_J = 100 °C
1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
10
0.1
T_J = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1
0.1
0.01
Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214BA (GF1)
Cathode Band
0.066 (1.68)
0.040 (1.02)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.076 (1.93)
MAX.
0.118 (3.00)
0.100 (2.54)
0.060 (1.52)
0.030 (0.76)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.108 (2.74)
0.098 (2.49)
0.060 (1.52)
MIN.
0.114 (2.90)
0.094 (2.39)
0.220 (5.58)
REF.
Revision: 11-Dec-13
3
Document Number: 88697
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000