RGF1J-E3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount Glass Passivated Junction Fast Switching Rectifier

RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Junction Fast Switching Rectifier
SUPERECTIFIER^®
DO-214BA (GF1)
PPRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I_FSM
V_F
t_rr
T_J max.
Package
30 A
1.3 V
150 ns, 250 ns, 500 ns
175 °C
DO-214BA (GF1)
Diode variations
Single
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214BA, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Two bands indicate cathode end - 1^st band
denotes device type and 2^nd band denotes repetitive peak
reverse voltage rating
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT
Device marking code
RA
RB
RD
RG
RJ
RK
RM
Maximum repetitive peak reverse voltage
V_RRM
50
Maximum RMS voltage
V_RMS
35
Maximum DC blocking voltage
Maximum average forward rectified current
at T_L = 120 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
V_DC
50
I_F(AV)
I_FSM
Maximum full load reverse current, full cycle
average T_A = 55 °C
I_R(AV)
Operating junction and storage temperature range T_J, T_STG
100
200
400
600
800 1000
V
70
140
280
420
560
700
V
100
200
400
600
800 1000
V
1.0
A
30
A
50
μA
- 65 to + 175
°C
Revision: 11-Dec-13
1
Document Number: 88697
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000