MSE1PJ-M3 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount ESD Capability Rectifier

www.vishay.com
10
T_J = 175 °C
1
T_J = 150 °C
0.1
T_J = 25 °C
T_J = 50 °C
T_J = 75 °C
0.01
0
T_J = 100 °C
T_J = 125 °C
0.4
0.8
1.2
1.6
2.0
2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
MSE1PB thru MSE1PJ
Vishay General Semiconductor
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
10
1
0.1
0.01
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
T_J = 75 °C
T_J = 25 °C
1000
100
10
Junction to Ambient
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
1000
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP
Cathode Band
0.059 (1.50)
0.043 (1.10)
0.030 (0.75)
0.022 (0.55)
0.055 (1.40)
0.047 (1.20)
0.039 (0.98)
0.031 (0.78)
0.030 (0.75)
0.022 (0.55)
0.029 (0.73)
0.025 (0.63)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
0.011 (0.27)
0.005 (0.12)
0.043
(1.10)
Mounting Pad Layout
0.079
(2.00)
0.032
(0.80)
0.032
(0.80)
0.020 (0.50)
Revision: 24-May-12
3
Document Number: 89067
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000