MSE1PJ-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount ESD Capability Rectifier

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MSE1PB thru MSE1PJ
Vishay General Semiconductor
Surface Mount ESD Capability Rectifier
eSMP ^® Series
Top View
Bottom View
MicroSMP
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage
current
• ESD capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at IF = 1.0 A
I_R
T_J max.
1.0 A
100 V, 200 V, 400 V, 600 V
20 A
0.925 V
1 μA
175 °C
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Operating junction and storage temperature range
T_J, T_STG
MSE1PB
SB
100
MSE1PD MSE1PG
SD
SG
200
400
1.0
20
- 55 to + 175
MSE1PJ
SJ
600
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage
Maximum reverse current
Typical reverse recovery time
Typical junction capacitance
I_F = 0.5 A
I_F = 1.0 A
T_A = 25 °C
I_F = 0.5 A
I_F = 1.0 A
T_A = 125 °C
Rated V_R
T_A = 25 °C
T_A = 125 °C
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
4.0 V, 1 MHz
V_F ⁽¹⁾
I_R ⁽²⁾
t_rr
C_J
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
TYP.
0.940
1.016
0.834
0.925
-
3.7
780
5
MAX.
-
1.1
-
0.98
1.0
50
-
-
UNIT
V
μA
ns
pF
Revision: 24-May-12
1
Document Number: 89067
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000