MBR30H35CT_15 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier

MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
40
MBR, MBRB
30
20
MBRF
10
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Derating Curve
100
10
T_J = 150 °C
1
0.1
T_J = 125 °C
0.01
0.001
MBR30H35CT, MBR30H45CT
MBR30H50CT, MBR30H60CT
T_J = 25 °C
0.0001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
150
T_J = T_J Max.
8.3 ms Single Half Sine-Wave
125
100
75
50
25
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
T_J = 150 °C
10
1
0.1
T_J = 25 °C
T_J = 125 °C
0.01
0
MBR30H35CT, MBR30H45CT
MBR30H50CT, MBR30H60CT
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
1
0.1
0.01
0.1
1
10
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 13-Aug-13
3
Document Number: 88866
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