MB2S Datasheet, PDF (3/4 Pages) General Semiconductor – MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIER

MB2S, MB4S & MB6S
Vishay General Semiconductor
10
T_J = 150 °C
1
T_J = 25 °C
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Voltage Characteristics Per Diode
30
T_J = 25 °C
25
f = 1.0 MHz
V_sig = 50 mVp-p
20
15
10
5
0
0.1
1
10
100
1000
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
10
T_J = 125 °C
1
0.1
T_J = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.029 (0.74)
0.017 (0.43)
TO-269AA (MBS)
Mounting Pad Layout
0.023 MIN.
(0.58 MIN.)
0.161 (4.10)
0.144 (3.65)
0.106 (2.70)
0.090 (2.30)
0.114 (2.90)
0.094 (2.40)
0.272 (6.90)
0.252 (6.40)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0 to 8°
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.030 MIN.
(0.76 MIN.)
0.205 (5.21)
0.195 (4.95)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.272 MAX.
(6.91 MAX.)
0.105 (2.67)
0.095 (2.41)
Document Number: 88661 For technical questions within your region, please contact one of the following:
Revision: 01-Feb-08
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