MB2S Datasheet, PDF (2/4 Pages) General Semiconductor – MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIER

MB2S, MB4S & MB6S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
MB2S
MB4S
Maximum instantaneous
forward voltage drop per diode
0.4 A
V_F
1.0
Maximum DC reverse current at rated T_A = 25 °C
DC blocking voltage per diode
T_A = 125 °C
I_R
5.0
100
Typical junction capacitance per diode 4.0 V, 1 MHz
C_J
13
MB6S
UNIT
V
µA
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB2S
Typical thermal resistance
R_θJA
R_θJA
R_θJL
MB4S
85 ⁽¹⁾
70 ⁽²⁾
20 ⁽¹⁾
MB6S
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
MB2S-E3/45
0.22
45
MB2S-E3/80
0.22
80
BASE QUANTITY
100
3000
DELIVERY MODE
Tube
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
0.8
Aluminum Substrate
0.7
0.6
0.5
0.4 ^Glass
Epoxy
0.3 ^P.C.B.
0.2
0.1 Resistive or Inductive Load
0
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Figure 1. Derating Curve for Output Rectified Current
35
T_A = 40 °C
Single Half Sine-Wave
30
25
20
f = 50 Hz
f = 60 Hz
15
10
5
1.0 Cycle
0
1
10
100
Number of Cycles
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 88661
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Revision: 01-Feb-08